Impact Factor3.2

DOI number:10.1007/s10971-025-06996-y

Affiliation of Author(s):西北大学电子信息学院

Teaching and Research Group:电子科学与技术系

Journal:Journal of Sol-Gel Science and Technology

Place of Publication:U.S.

Funded by:国际科技合作项目

Key Words:Comprehensive optimization; Electric field loss; Machine learning optimization; Terahertz metamaterial absorber Thermally switchable absorption; VO_2–graphene heterostructure

Abstract:VO_2, a prototypical phase-change material, exhibits a reversible insulator-to-metal transition near 68 °C, accompanied by several orders of magnitude change in electrical conductivity while preserving structural integrity. Graphene, renowned for its tunable electronic properties and superior optical response, has emerged as a promising alternative to conventional periodic metal structures in metamaterials, or as an interfacial layer in composite devices. In this study, we integrate graphene and VO_2 into a multilayer heterostructured metamaterial absorber and incorporate machine learning techniques to optimize its geometric parameters, to achieve switchable high-performance absorption behavior. The designed absorber consists of a patterned metallic top layer, a graphene sheet, a VO_2-based functional layer, two dielectric layers, and a metallic aluminum ground plane. Leveraging the thermally induced phase transition of VO_2, the device enables dynamic switching of different absorption modes without changing its geometric shape and parameters. Specifically, in the metallic state of VO_2 (>68°C), the absorber demonstrates broadband absorption performance with an average absorption exceeding 90% across the 1.14–1.305 THz range. In contrast, when VO_2 is in its insulating state (<68 °C), the device exhibits triple band narrowband absorption with three sharp resonance peaks, achieving maximum absorptivities of 72%, 71%, and 99.7%, respectively. This work introduces a thermally switchable metamaterial absorber with fixed geometry, integrating VO_2 and graphene to achieve thermally switchable absorption behaviors, offering a practical solution for multifunctional terahertz applications.

Indexed by:Journal paper

Discipline:Engineering

First-Level Discipline:Electronic Science and Techonology

Document Type:J

Issue:116

Page Number:2654-2669

Translation or Not:no

Date of Publication:2025-10-25

Included Journals:SCI

Links to published journals:https://link.springer.com/article/10.1007/s10971-025-06996-y

First Author:Jiaxuan Xue

Correspondence Author:Cheng Chen*

All the Authors:Shilei Tian

All the Authors:Yvhang Wang

All the Authors:Zihan Wang

All the Authors:Jixin Wang

All the Authors:Wu Zhao

All the Authors:Zhiyong Zhang

All the Authors:Johan Stiens