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DOI码：10.1039/D5NJ04419G

发表刊物：New Journal of Chemistry

摘要：Nb2SiTe4, a layered narrow-bandgap van der Waals semiconductor, has attracted increasing attention due to its high carrier mobility and excellent optical absorption properties. In this study, we exploited this material in a photoelectrochemical (PEC) type photodetector (PD) to investigate its potential for energy saving optoelectronics. A simple high-temperature solid-state reaction method was utilized for synthesizing high quality Nb2SiTe4 crystals, and liquid-phase exfoliation (LPE) was employed to prepare the corresponding nanosheets for device construction. The photoelectric performances of the Nb2SiTe4 nanosheet PDs were characterized in a three-electrode system and broad spectral responses ranging from 400 to 900 nm were detected. The effects of dispersants, electrolyte, as well as light power density on the device performance were systematically investigated. At 0 V bias voltage, an optimal performance of the PDs was obtained in an acidic testing environment upon illumination of the 400 nm light, and the highest photocurrent density of 0.72 µA cm−2 and responsivity of 7.71 µA W−1 were achieved. Besides, the device demonstrated fine long-term cycling and air stabilities. This work implies the potential of Nb2SiTe4 for application in broadband photodetection of self-powering devices.

论文类型：期刊论文

卷号：50

期号：0

页面范围：6296-6304

是否译文：否

发布期刊链接：https://pubs.rsc.org/en/content/articlelanding/2026/nj/d5nj04419g/unauth

第一作者：Chengzheng Ye

通讯作者：Jiaming Song

合写作者：Xin Zhao

合写作者：Zijuan Ma

合写作者：Jialong Ma

合写作者：Yawen Liu

合写作者：Shanbo Cui

合写作者：Zhuo Wang

合写作者：Guoshuai Ban

合写作者：Feng Teng

合写作者：Peng Hu

合写作者：Haibo Fan