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Journal:Applied Surface Science

Abstract:Single Bi dopants in Si exhibit promising properties for quantum information science. Here we study, as a function of Bi-doped Si film thickness, the evolution and ultimate removal of lattice defects that are associated with a recently demonstrated viable route to precisely incorporate Bi dopants in homoepitaxial Si thin films. Scanning tunneling microscopy imaging reveals how the elongated defect structures in the Si lattice, originating from prefabricated Bi nanolines on the substrate surface that are the source of the Bi dopants, evolve with increasing Si overlayer thickness. Moreover, we demonstrate that a prolonged low-temperature annealing is able to annihilate these defect structures while leaving a significant Bi dopant concentration in the Si films.

Indexed by:Journal paper

Document Type:J

Volume:502

Issue:1

Page Number:144284

Translation or Not:no

Date of Publication:2020-02-01

Included Journals:SCI

First Author:Jiaming Song

All the Authors:Bethany M. Hudak

All the Authors:Andrew R. Lupini