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DOI number:10.1021/acs.jpcc.1c03549

Journal:The Journal of Physical Chemistry C

Abstract:The precise positioning of dopant atoms within bulk crystal lattices could enable novel applications in areas including solid-state sensing and quantum computation. Established scanning probe techniques are capable tools for the manipulation of surface atoms, but at a disadvantage due to their need to bring a physical tip into contact with the sample. This has prompted interest in electron-beam techniques, followed by the first proof-of-principle experiment of bismuth dopant manipulation in crystalline silicon. Here, we use first-principles modeling to discover a novel indirect exchange mechanism that allows electron impacts to non-destructively move dopants with atomic precision within the silicon lattice. However, this mechanism only works for the two heaviest group V donors with split-vacancy configurations, Bi and Sb. We verify our model by directly imaging these configurations for Bi and by demonstrating that the promising nuclear spin qubit Sb can be manipulated using a focused electron beam.

Indexed by:Journal paper

Document Type:J

Volume:125

Issue:29

Page Number:16041

Translation or Not:no

Date of Publication:2021-07-21

Included Journals:SCI

First Author:Alexander Markevich

Correspondence Author:Andrew R. Lupini

Correspondence Author:Toma Susi

All the Authors:Bethany M. Hudak

All the Authors:Jacob Madsen

All the Authors:Jiaming Song

All the Authors:Paul C. Snijders