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DOI码：10.1002/adom.202501944

发表刊物：Advanced Optical Materials

摘要：SnS2, a promising candidate for high‐performance photodetectors (PDs), encounters challenges as high dark current and poor stability in practical applications. Herein, pristine SnS2 (P0SS) and phosphorus (P) doped SnS2 single crystals (P1SS, P2SS) are synthesized and implanted into devices with an asymmetric electrode contact structure, which demonstrate self‐powered photoelectric responses. At 0 V, P‐doped SnS2 PDs exhibit significant broadening of the response spectrum. Meanwhile, the P2SS device achieves the highest responsivity of 57.4 mA W⁻¹ and specific detectivity of 1.22 × 10¹¹ Jones at 365 nm, and has superior long‐term cyclic stability. At 1 V, the dark current of P2SS is significantly lowered, and the on‐off ratio is about two orders of magnitude higher than those for the other two at 515 nm. The self‐powered phenomenon of the three PDs here is attributed to the asymmetric Schottky barriers at the two gold/SnS2 interfaces of the source and drain electrodes. The enhanced photoelectric response of the P‐doped SnS2 PDs can be due to the lowered conductivity and higher exciton separation efficiency by the compensation doping. This work offers a promising pathway for optimizing the optoelectronic detection capability of future portable devices.

论文类型：期刊论文

是否译文：否

发布期刊链接：https://advanced.onlinelibrary.wiley.com/doi/10.1002/adom.202501944?utm_source=researchgate

第一作者：Zijuan Ma

第一作者：Jiaming Song

合写作者：Xin Zhao

合写作者：Yelong Wu

合写作者：Juanjuan Yang

合写作者：Chengzheng Ye

合写作者：Jialong Ma

合写作者：Feng Teng

合写作者：Peng Hu

合写作者：Haibo Fan