点击次数：

影响因子：5.8

DOI码：10.1016/j.surfin.2024.105319

发表刊物：Surfaces and Interfaces

摘要：As a type of layered van der Waals material, transition metal phosphorus trichalcogenide FePSe3’s high carrier mobility and light absorption capability offering this p-type semiconductor promising utilization in broadband optoelectronics detection. Despite of the specific photoelectric response behavior of the FePSe3-based solid-state photodetectors, the self-powering potential of the FePSe3-based devices still remains unexplored. In this study, we harnessed the architecture of the photoelectrochemical photodetector and fabricated a FePSe3-based device to investigate its photoelectric performance under different illumination and bias conditions. It was found that the device demonstrated a visible-near-infrared self-powering detection capability ranging from 400 to 800 nm, fast response speed, high sensitivity and outstanding cyclic stability. This research signifies the promising potential of FePSe3 in the field of self-powered optoelectronics.

论文类型：期刊论文

文献类型：J

卷号：55

期号：0

页面范围：105319

是否译文：否

收录刊物：SCI

发布期刊链接：https://www.sciencedirect.com/science/article/pii/S2468023024014755

第一作者：Guoshuai Ban

第一作者：Jiaming Song

合写作者：Zhuo Wang

合写作者：Xin Zhao

合写作者：Yuting Li

合写作者：Juanjuan Yang

合写作者：Chengzheng Ye

合写作者：Feng Teng

合写作者：Peng Hu

合写作者：Haibo Fan