Directed Atom-by-Atom Assembly of Dopants in Silicon
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影响因子：
0.0
DOI码：
10.1021/acsnano.8b02001
发表刊物：
ACS Nano
摘要：
The ability to controllably position single atoms inside materials is key for the ultimate fabrication of devices with functionalities governed by atomic-scale properties. Single bismuth dopant atoms in silicon provide an ideal case study in view of proposals for single-dopant quantum bits. However, bismuth is the least soluble pnictogen in silicon, meaning that the dopant atoms tend to migrate out of position during sample growth. Here we demonstrate epitaxial growth of thin silicon films doped with bismuth. We use atomic-resolution aberration-corrected imaging to view the as-grown dopant distribution and then to controllably position single dopants inside the film. Atomic-scale quantum-mechanical calculations corroborate the experimental findings. These results indicate that the scanning transmission electron microscope (STEM) is of particular interest for assembling functional materials atom-by-atom because it offers both real-time monitoring and atom manipulation. We envision electron-beam manipulation of atoms inside materials as an achievable route to controllable assembly of structures of individual dopants.
论文类型：
期刊论文
文献类型：
J
卷号：
12
期号：
6
页面范围：
5873
是否译文：
否
收录刊物：
SCI
第一作者：
Bethany M. Hudak
合写作者：
Jiaming Song
合写作者：
Hunter Sims
合写作者：
M. Claudia Troparevsky
合写作者：
Travis S. Humble
合写作者：
Sokrates T. Pantelides
合写作者：
Paul C. Snijders
合写作者：
Andrew R. Lupini
学位：博士
职称：副教授
所在单位：物理学院
