Mutant amplitude modulation behavior of MIS-like structure of few-layer graphene/SiO2/p-Si in 500-750 GHz band
- 影响因子：5.1
- DOI码：10.1016/j.diamond.2024.111684
- 所属单位：西北大学电子信息学院
- 教研室：电子科学与技术系
- 发表刊物：Diamond and Related Materials
- 刊物所在地：Netheland
- 项目来源：国际科技合作项目
- 关键字：Vector network analyzer; Millimeter-wave terahertz; Optical modulators; Device measurement; Simulation and modeling
- 摘要：Graphene has great application potential in the field of electromagnetic modulation field because of its excellent physical and electronic properties. Studies have demonstrated that the properties of graphene films with different layers are also different due to the difference in energy band structure. Nowadays, the modulation mechanism of monolayer graphene (MLG) and bilayer graphene (BLG) has been gradually discovered, but for graphene with more than three layers, the mechanism of whether it is tunable remains to be explored, especially on the proving from an experimental perspective. In this study, the CVD-prepared highly homogeneous few-layer graphene (FLG) film was combined with SiO2 nanolayers and P-doped Si substrate to form an MIS-like capacitor structure, a unique electromagnetic behavior of mutant amplitude modulation exhibited by FLG film was found, which was different from that of mono- and bi-layers of graphene. The results show that the structure exhibits obvious modulation behavior in the ultra-wideband frequency of 500–750 GHz and the bias of 0.9 V, up to 3.1 dB. This study makes a new supplement to a gap in the EM modulation system of graphene series material.
- 论文类型：期刊论文
- 学科门类：工学
- 一级学科：电子科学与技术
- 文献类型：J
- 期号：150
- 页面范围：111684
- 是否译文：否
- 发表时间：2024-12-14
- 收录刊物：SCI
- 发布期刊链接：https://www.sciencedirect.com/science/article/abs/pii/S0925963524008975?via%3Dihub
- 第一作者：Cheng Chen
- 通讯作者：Jixin Wang
- 通讯作者：Yang Dai
- 合写作者：Boyuan Gao
- 合写作者：Jiaxuan Xue
- 合写作者：Zhihao Li
- 合写作者：Zhiyong Zhang
- 合写作者：Wu Zhao
- 合写作者：Johan Stiens
