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DOI码：10.1021/acs.jpcc.1c03549

发表刊物：J. Phys. Chem. C

摘要：The precise positioning of dopant atoms within bulk crystal lattices could enable novel applications in areas including solid-state sensing and quantum computation. Established scanning probe techniques are capable tools for the manipulation of surface atoms, but at a disadvantage due to their need to bring a physical tip into contact with the sample. This has prompted interest in electron-beam techniques, followed by the first proof-of-principle experiment of bismuth dopant manipulation in crystalline silicon. Here, we use first-principles modeling to discover a novel indirect exchange mechanism that allows electron impacts to non-destructively move dopants with atomic precision within the silicon lattice. However, this mechanism only works for the two heaviest group V donors with split-vacancy configurations, Bi and Sb. We verify our model by directly imaging these configurations for Bi and by demonstrating that the promising nuclear spin qubit Sb can be manipulated using a focused electron beam.

论文类型：期刊论文

文献类型：J

卷号：125

期号：29

页面范围：16041

是否译文：否

收录刊物：SCI

第一作者：Alexander Markevich

通讯作者：Andrew R. Lupini

通讯作者：Toma Susi

合写作者：Bethany M. Hudak

合写作者：Jacob Madsen

合写作者：Jiaming Song

合写作者：Paul C. Snijders