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发表刊物：Appl. Surf. Sci.

摘要：Single Bi dopants in Si exhibit promising properties for quantum information science. Here we study, as a function of Bi-doped Si film thickness, the evolution and ultimate removal of lattice defects that are associated with a recently demonstrated viable route to precisely incorporate Bi dopants in homoepitaxial Si thin films. Scanning tunneling microscopy imaging reveals how the elongated defect structures in the Si lattice, originating from prefabricated Bi nanolines on the substrate surface that are the source of the Bi dopants, evolve with increasing Si overlayer thickness. Moreover, we demonstrate that a prolonged low-temperature annealing is able to annihilate these defect structures while leaving a significant Bi dopant concentration in the Si films.

论文类型：期刊论文

文献类型：J

卷号：502

期号：1

页面范围：144284

是否译文：否

收录刊物：SCI

第一作者：Jiaming Song

合写作者：Bethany M. Hudak

合写作者：Andrew R. Lupini