Patents
基于LRC工艺Ge PMOS器件及其制备方法

Affilication of Author(s):信息科学与技术学院(软件学院)

Patent Coverage:国内

School Sign:第一单位

Type of Patent:发明专利

Application Number:CN201610726484.7

Service Invention or Not:yes

Application Date:2016-08-25

Publication Date:2018-03-09

First Author:汪霖


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