Patents
激光再晶化Ge CMOS器件及其制备方法

Affilication of Author(s):信息科学与技术学院(软件学院)

Patent Coverage:国内

School Sign:第一单位

Type of Patent:发明专利

Application Number:CN201610718707.5

Service Invention or Not:yes

Application Date:2016-08-25

Publication Date:2017-12-08

First Author:汪霖


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