一种低温一步合成AgBiS2纳米晶的方法
- School Sign:西北大学
- Type of Patent:Invent
- State of Patent:Authorized patents
- Authorization number:CN 115893488 B
- Number of Inventors:4
- Service Invention or Not:no
- Disigner of the Invention:张耀红
- Disigner of the Invention:李俏
- Disigner of the Invention:沈晓玉
- Disigner of the Invention:丁帅