一种低温一步合成AgBiS2纳米晶的方法
- School Sign:西北大学
 - Type of Patent:Invent
 - State of Patent:Authorized patents
 - Authorization number:CN 115893488 B
 - Number of Inventors:4
 - Service Invention or Not:no
 - Disigner of the Invention:张耀红
 - Disigner of the Invention:李俏
 - Disigner of the Invention:沈晓玉
 - Disigner of the Invention:丁帅
 

