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DOI number:10.1039/D5NJ04419G

Journal:New Journal of Chemistry

Abstract:Nb2SiTe4, a layered narrow-bandgap van der Waals semiconductor, has attracted increasing attention due to its high carrier mobility and excellent optical absorption properties. In this study, we exploited this material in a photoelectrochemical (PEC) type photodetector (PD) to investigate its potential for energy saving optoelectronics. A simple high-temperature solid-state reaction method was utilized for synthesizing high quality Nb2SiTe4 crystals, and liquid-phase exfoliation (LPE) was employed to prepare the corresponding nanosheets for device construction. The photoelectric performances of the Nb2SiTe4 nanosheet PDs were characterized in a three-electrode system and broad spectral responses ranging from 400 to 900 nm were detected. The effects of dispersants, electrolyte, as well as light power density on the device performance were systematically investigated. At 0 V bias voltage, an optimal performance of the PDs was obtained in an acidic testing environment upon illumination of the 400 nm light, and the highest photocurrent density of 0.72 µA cm−2 and responsivity of 7.71 µA W−1 were achieved. Besides, the device demonstrated fine long-term cycling and air stabilities. This work implies the potential of Nb2SiTe4 for application in broadband photodetection of self-powering devices.

Indexed by:Journal paper

Volume:50

Issue:0

Page Number:6296-6304

Translation or Not:no

Date of Publication:2026-03-16

Links to published journals:https://pubs.rsc.org/en/content/articlelanding/2026/nj/d5nj04419g/unauth

First Author:Chengzheng Ye

Correspondence Author:Jiaming Song

All the Authors:Xin Zhao

All the Authors:Zijuan Ma

All the Authors:Jialong Ma

All the Authors:Yawen Liu

All the Authors:Shanbo Cui

All the Authors:Zhuo Wang

All the Authors:Guoshuai Ban

All the Authors:Feng Teng

All the Authors:Peng Hu

All the Authors:Haibo Fan