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DOI number:10.1002/adom.202501944

Journal:Advanced Optical Materials

Abstract:SnS2, a promising candidate for high‐performance photodetectors (PDs), encounters challenges as high dark current and poor stability in practical applications. Herein, pristine SnS2 (P0SS) and phosphorus (P) doped SnS2 single crystals (P1SS, P2SS) are synthesized and implanted into devices with an asymmetric electrode contact structure, which demonstrate self‐powered photoelectric responses. At 0 V, P‐doped SnS2 PDs exhibit significant broadening of the response spectrum. Meanwhile, the P2SS device achieves the highest responsivity of 57.4 mA W⁻¹ and specific detectivity of 1.22 × 10¹¹ Jones at 365 nm, and has superior long‐term cyclic stability. At 1 V, the dark current of P2SS is significantly lowered, and the on‐off ratio is about two orders of magnitude higher than those for the other two at 515 nm. The self‐powered phenomenon of the three PDs here is attributed to the asymmetric Schottky barriers at the two gold/SnS2 interfaces of the source and drain electrodes. The enhanced photoelectric response of the P‐doped SnS2 PDs can be due to the lowered conductivity and higher exciton separation efficiency by the compensation doping. This work offers a promising pathway for optimizing the optoelectronic detection capability of future portable devices.

Indexed by:Journal paper

Translation or Not:no

Date of Publication:2025-10-28

Links to published journals:https://advanced.onlinelibrary.wiley.com/doi/10.1002/adom.202501944?utm_source=researchgate

First Author:Zijuan Ma

First Author:Jiaming Song

All the Authors:Xin Zhao

All the Authors:Yelong Wu

All the Authors:Juanjuan Yang

All the Authors:Chengzheng Ye

All the Authors:Jialong Ma

All the Authors:Feng Teng

All the Authors:Peng Hu

All the Authors:Haibo Fan