Impact Factor5.8

DOI number:10.1016/j.surfin.2024.105319

Journal:Surfaces and Interfaces

Abstract:As a type of layered van der Waals material, transition metal phosphorus trichalcogenide FePSe3’s high carrier mobility and light absorption capability offering this p-type semiconductor promising utilization in broadband optoelectronics detection. Despite of the specific photoelectric response behavior of the FePSe3-based solid-state photodetectors, the self-powering potential of the FePSe3-based devices still remains unexplored. In this study, we harnessed the architecture of the photoelectrochemical photodetector and fabricated a FePSe3-based device to investigate its photoelectric performance under different illumination and bias conditions. It was found that the device demonstrated a visible-near-infrared self-powering detection capability ranging from 400 to 800 nm, fast response speed, high sensitivity and outstanding cyclic stability. This research signifies the promising potential of FePSe3 in the field of self-powered optoelectronics.

Indexed by:Journal paper

Document Type:J

Volume:55

Issue:0

Page Number:105319

Translation or Not:no

Date of Publication:2024-10-23

Included Journals:SCI

Links to published journals:https://www.sciencedirect.com/science/article/pii/S2468023024014755

First Author:Guoshuai Ban

First Author:Jiaming Song

All the Authors:Zhuo Wang

All the Authors:Xin Zhao

All the Authors:Yuting Li

All the Authors:Juanjuan Yang

All the Authors:Chengzheng Ye

All the Authors:Feng Teng

All the Authors:Peng Hu

All the Authors:Haibo Fan