Impact Factor6.4

DOI number:10.1039/d3tc03804a

Journal:J. Mater. Chem. C.

Abstract:Self-powered photodetectors have been attracting more and more attention due to the energy shortage issues around the world. As a type of layered van der Waals material, NiPS3 has garnered much attention in the realms of optoelectronics. In order to excavate the possible self-powered potential of this material, we utilized the asymmetric electrode contact design in the device structure of a NiPS3-based photodetector. Photoelectric characterization of the device presented a broadband spectral detection range from 254 nm to 1020 nm. The device showed a zero-bias photoelectric response with responsivity and detectivity of 2.3 mA W−1 and 6.2 × 109 Jones, respectively. Moreover, this photodetector exhibited a response time of less than 40 ms for both rising and decay times and low dark current (∼pA). The self-powered phenomenon is possibly attributed to the unbalanced Schottky barriers of the two electrode contacts. This study provides a potential route for van der Waals material-based photoelectric devices applied in wearable photoelectronic devices and green energy economy.

Indexed by:Journal paper

Document Type:J

Volume:12

Issue:2

Page Number:593-599

Translation or Not:no

Date of Publication:2024-01-01

Included Journals:SCI

Links to published journals:https://pubs.rsc.org/en/content/articlelanding/2024/tc/d3tc03804a/unauth

First Author:Linghao Zong

First Author:Jiaming Song

All the Authors:Shuxian Wang

All the Authors:Wenhui Chen

All the Authors:Juanjuan Yang

All the Authors:Bingda Li

All the Authors:Peng Hu

All the Authors:Haibo Fan

All the Authors:Feng Teng

All the Authors:Xin Zhao