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[25][23] Q Wan, T. Y. Yang, Si Li, M. Yang, Z. Zhu, C. L. Wu, C. Peng, S. K. Mo, W. Wu, Z. H. Chen, Y. B. Huang, L. L. Lev, V. N. Strocov, J. Hu, Z. Q. Mao, H. Zheng, J. F. Jia, Y. G. Shi, S. A. Yang, N Xu, "Inherited weak topological insulator signatures in the topological hourglass semimetal Nb3XTe6 (X= Si, Ge)," Phys. Rev. B 103, 165107 (2021).
[26][22] B. Wang, W. Xia, Si Li, K. Wang, S. A. Yang, Y. Guo, J. Xue, "One-Dimensional Metal Embedded in Two-Dimensional Semiconductor in Nb2Six–1Te4," ACS nano 15 (4), 7149-7154 (2021).
[27][21] C. Yang, M. Chen, Si Li, X. Zhang, C. Hua, H. Bai, C. Xiao, S. A. Yang, P. He, Z.-A. Xu, Y. Lu, "Coexistence of Ferroelectricity and Ferromagnetism in One-Dimensional SbN and BiN Nanowires," ACS Applied Materials & Interfaces 13 (11), 13517-13523 (2021).
[28][20] Si Li, S.-S. Wang, B. Tai, W. Wu, B. Xiang, X.-L. Sheng, S. A. Yang, "Tunable anomalous Hall transport in bulk and two-dimensional 1T-CrTe2: A first-principles study," Phys. Rev. B 103, 045114 (2021).
[29][19] Si Li, W. Wu, X. Feng, S. Guan, W. Feng, Y. Yao, S.A. Yang, "Valley-dependent properties of monolayer MoSi2N4, WSi2N4 and MoSi2As4," Phys. Rev. B 102, 235435 (2020).
[30][18] Y. Chen, L. Wu, H. Xu, C. Cong, Si Li, S. Feng, H. Zhang, C. Zou, J. Shang, S. A. Yang, K. P. Loh, W. Huang, T. Yu, "Visualizing the Anomalous Charge Density Wave States in Graphene/NbSe2 Heterostructures," Adv. Mater. 32, 2003746 (2020).
[31][17] Y. Pang, E. Rezaei, D. Chen, Si Li, Y. Jian, Q. Wang, Z. Wang, J. Duan, M. Zebarjadi, Y. Yao, "Thermoelectric properties of layered ternary telluride Nb3SiTe6," Phys. Rev. Materials 4, 094205 (2020).
[32][16] Si Li, Z.-M. Yu, Y. Yao, and S. A. Yang, "Type-II topological metals," Frontiers of Physics. 15, 43201 (2020).
[33][15] Z. Zhu, C. Liao, Si Li, X. Zhang, W. Wu, Z.-M. Yu, R. Yu, W. Zhang, and S. A. Yang, "First-principles study of bulk and two-dimensional structures of the AMnBi family of materials (A = K, Rb, Cs)," Phys. Rev. B 102, 035444 (2020).
[34][14] X. Wu, Y. Feng, Si Li, B. Zhang, and G. Gao, "2D Mn2C6Se12 and Mn2C6S6Se6: Intrinsic Room-Temperature Dirac Spin Gapless Semiconductors and Perfect Spin Transport Properties," J. Phys. Chem. C 124, 16127 (2020).
[35][13] Z. Zhu, Si Li, M. Yang, X.-A. Nie, H.-K. Xu, X. Yang, D.-D. Guan, S. Wang, Y.-Y. Li, C. Liu, Z.-Q. Mao, N. Xu, Y. Yao, S. A. Yang, Y.-G. Shi, H. Zheng, J.-F. Jia, "A tunable and unidirectional one-dimensional electronic system Nb2n+1SinTe4n+2," npj Quantum Materials 5, 35 (2020).
[36][12] Y. Gan, J. Liang, C. Cho, Si Li, Y. Guo, X. Ma, X. Wu, J. Wen, X. Du, M. He, C. Liu, S. A. Yang, K. Wang, L. Zhang, "Bandgap opening in MoTe2 thin flakes induced by surface oxidation," Frontiers of Physics 15, 33602 (2020).
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