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Wanxu Zhang
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Patents

Current position: Home  >  Patents

激光再晶化Ge CMOS器件及其制备方法

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Affilication of Author(s):信息科学与技术学院（软件学院）

Patent Coverage:国内

School Sign:第一单位

Type of Patent:发明专利

Application Number:CN201610718707.5

Service Invention or Not:yes

First Author:汪霖