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影响因子：8.3

DOI码：10.1021/acsami.4c01183

发表刊物：ACS Appl. Mater. Interfaces

摘要：Transition metal thiophosphates (MTPs) are a group of emerging van der Waals materials with widely tunable band gaps. In the MTP family, CdPSe3 is demonstrated to possess a wide energy band gap and high carrier mobility, making it a potential candidate in optoelectronic applications. Here, we reported photoelectric response behaviors of both CdPSe3- and CdPSe3/MoS2-based photodetectors (noted as CPS and CM, respectively); these showed prominent photoelectric performances, and the latter proved to be significantly superior to the former. These devices exhibited ultralow dark current at a magnitude order of 10–12 A and fine cycle and air stabilities. Compared with CPS, CM demonstrated the highest responsivity (91.12 mA/W) and detectivity (1.74 × 1011 Jones) at 5 V under 425 nm light illumination. Besides, CM showed self-powered photoelectric responses at zero bias, which was attributed to the improved separation efficiency of photogenerated carriers by the built-in electric field at the interface of the p–n junction. This work proves a prospect for the CM device in portable, self-powered optoelectronic device applications.

论文类型：期刊论文

文献类型：J

卷号：16

期号：25

页面范围：32334–32343

是否译文：否

收录刊物：SCI

发布期刊链接：https://pubs.acs.org/doi/full/10.1021/acsami.4c01183

第一作者：Juanjuan Yang

第一作者：Jiaming Song

合写作者：Xin Zhao

合写作者：Linghao Zong

合写作者：Shuxian Wang

合写作者：Bingda Li

合写作者：Yuting Li

合写作者：Guoshuai Ban

合写作者：Zhuo Wang

合写作者：Zijuan Ma

合写作者：Peng Hu

合写作者：Feng Teng