点击次数：

影响因子：6.4

DOI码：10.1039/d3tc03804a

发表刊物：J. Mater. Chem. C.

摘要：Self-powered photodetectors have been attracting more and more attention due to the energy shortage issues around the world. As a type of layered van der Waals material, NiPS3 has garnered much attention in the realms of optoelectronics. In order to excavate the possible self-powered potential of this material, we utilized the asymmetric electrode contact design in the device structure of a NiPS3-based photodetector. Photoelectric characterization of the device presented a broadband spectral detection range from 254 nm to 1020 nm. The device showed a zero-bias photoelectric response with responsivity and detectivity of 2.3 mA W−1 and 6.2 × 109 Jones, respectively. Moreover, this photodetector exhibited a response time of less than 40 ms for both rising and decay times and low dark current (∼pA). The self-powered phenomenon is possibly attributed to the unbalanced Schottky barriers of the two electrode contacts. This study provides a potential route for van der Waals material-based photoelectric devices applied in wearable photoelectronic devices and green energy economy.

论文类型：期刊论文

文献类型：J

卷号：12

期号：2

页面范围：593-599

是否译文：否

收录刊物：SCI

发布期刊链接：https://pubs.rsc.org/en/content/articlelanding/2024/tc/d3tc03804a/unauth

第一作者：Linghao Zong

第一作者：Jiaming Song

合写作者：Shuxian Wang

合写作者：Wenhui Chen

合写作者：Juanjuan Yang

合写作者：Bingda Li

合写作者：Peng Hu

合写作者：Haibo Fan

合写作者：Feng Teng

合写作者：Xin Zhao