Impact Factor8.3

DOI number:10.1021/acsami.4c01183

Journal:ACS Appl. Mater. Interfaces

Abstract:Transition metal thiophosphates (MTPs) are a group of emerging van der Waals materials with widely tunable band gaps. In the MTP family, CdPSe3 is demonstrated to possess a wide energy band gap and high carrier mobility, making it a potential candidate in optoelectronic applications. Here, we reported photoelectric response behaviors of both CdPSe3- and CdPSe3/MoS2-based photodetectors (noted as CPS and CM, respectively); these showed prominent photoelectric performances, and the latter proved to be significantly superior to the former. These devices exhibited ultralow dark current at a magnitude order of 10–12 A and fine cycle and air stabilities. Compared with CPS, CM demonstrated the highest responsivity (91.12 mA/W) and detectivity (1.74 × 1011 Jones) at 5 V under 425 nm light illumination. Besides, CM showed self-powered photoelectric responses at zero bias, which was attributed to the improved separation efficiency of photogenerated carriers by the built-in electric field at the interface of the p–n junction. This work proves a prospect for the CM device in portable, self-powered optoelectronic device applications.

Indexed by:Journal paper

Document Type:J

Volume:16

Issue:25

Page Number:32334–32343

Translation or Not:no

Date of Publication:2024-06-11

Included Journals:SCI

Links to published journals:https://pubs.acs.org/doi/full/10.1021/acsami.4c01183

First Author:Juanjuan Yang

First Author:Jiaming Song

All the Authors:Xin Zhao

All the Authors:Linghao Zong

All the Authors:Shuxian Wang

All the Authors:Bingda Li

All the Authors:Yuting Li

All the Authors:Guoshuai Ban

All the Authors:Zhuo Wang

All the Authors:Zijuan Ma

All the Authors:Peng Hu

All the Authors:Feng Teng